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| SMD Type NPN Transistors KST8050 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 Collector Current: IC=1.5A 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 40 25 5 1.5 0.3 150 -55 to 150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base Breakdown voltage Collector-base cut-off current Collector-emitter cut-off current Emitter-base cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditons IC = 100 iA , IE = 0 IC = 1mA , IB = 0 IE = 100 iA , IC = 0 VCB = 40 V , IE = 0 VCE = 20 V , IB = 0 VEB = 5 V , IC = 0 VCE = 1 V , IC = 100 mA VCE = 1 V , IC = 800 mA IC = 800 mA , IB = 80 mA IC = 800 mA , IB = 80 mA VCE = 10 V , IC = 50 mA , f = 30 MHz 100 120 40 0.5 1.2 V V MHz Min 40 25 5 0.1 0.1 0.1 400 Typ Max Unit V V V A A A hFE Classification Marking Rank hFE L 120 200 Y1 H 200 350 J 300 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type KST8050 Typical Characteristics Transistors Fig.1 Static Characteristic Fig.2 DC Current Gain Fig.3 Base Emitter ON Voltage Fig.4 Base Emitter Saturation Voltage Collector Emitter Saturation Voltage Fig.5 Current Gain Bandwidth Product Fig.6 Colletor Output Capacitance 2 www.kexin.com.cn |
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